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Accueil > Centre des produits > Produits semi-conducteurs discrets > Diodes - redresseurs - Single > C4D05120E-TR
C4D05120E-TR
C4D05120E-TR
Modèle de produit:
C4D05120E-TR
Fabricant:
Cree
La description:
DIODE SCHOTTKY 1.2KV 19A TO252-2
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
70932 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
C4D05120E-TR.pdf
Enquête

introduction

We can supply C4D05120E-TR, use the request quote form to request C4D05120E-TR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number C4D05120E-TR.The price and lead time for C4D05120E-TR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# C4D05120E-TR.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-C4D05120E-TR
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Inverse de crête (max):Silicon Carbide Schottky
Tension - directe (Vf) (max) @ Si:19A
Tension - Ventilation:TO-252-2
Séries:Z-Rec®
État RoHS:Tape & Reel (TR)
Temps de recouvrement inverse (trr):No Recovery Time > 500mA (Io)
Résistance @ Si, F:390pF @ 0V, 1MHz
Polarisation:TO-252-3, DPak (2 Leads + Tab), SC-63
Température d'utilisation - Jonction:0ns
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Délai de livraison standard du fabricant:5 Weeks
Référence fabricant:C4D05120E-TR
Description élargie:Diode Silicon Carbide Schottky 1200V (1.2kV) 19A Surface Mount TO-252-2
Configuration diode:150µA @ 1200V
La description:DIODE SCHOTTKY 1.2KV 19A TO252-2
Courant - fuite, inverse à Vr:1.8V @ 5A
Courant - Moyen redressé (Io) (par diode):1200V (1.2kV)
Capacité à Vr, F:-55°C ~ 175°C
Email:[email protected]

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