2SC5085-O(TE85L,F)
2SC5085-O(TE85L,F)
Modèle de produit:
2SC5085-O(TE85L,F)
Fabricant:
Toshiba Semiconductor and Storage
La description:
TRANS RF NPN 12V 1MHZ USM
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
68565 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
2SC5085-O(TE85L,F).pdf

introduction

We can supply 2SC5085-O(TE85L,F), use the request quote form to request 2SC5085-O(TE85L,F) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 2SC5085-O(TE85L,F).The price and lead time for 2SC5085-O(TE85L,F) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 2SC5085-O(TE85L,F).We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-2SC5085-O(TE85L,F)
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - Collecteur-émetteur disruptif (Max):12V
Transistor Type:NPN
Package composant fournisseur:USM
Séries:-
Puissance - Max:100mW
Emballage:Cut Tape (CT)
Package / Boîte:SC-70, SOT-323
Autres noms:2SC5085-O(TE85LF)CT
Température de fonctionnement:125°C (TJ)
Noise Figure (dB Typ @ f):1dB @ 500MHz
Type de montage:Surface Mount
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Gain:-
Fréquence - Transition:7GHz
Description détaillée:RF Transistor NPN 12V 80mA 7GHz 100mW Surface Mount USM
Gain en courant DC (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Courant - Collecteur (Ic) (max):80mA
Email:[email protected]

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