1SS187,LF
Modèle de produit:
1SS187,LF
Fabricant:
Toshiba Semiconductor and Storage
La description:
DIODE GEN PURP 80V 100MA S-MINI
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
63526 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
1SS187,LF.pdf

introduction

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Spécifications

Numéro de pièce interne RO-1SS187,LF
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - directe (Vf) (max) @ Si:1.2V @ 100mA
Tension - inverse (Vr) (max):80V
Package composant fournisseur:S-Mini
La vitesse:Small Signal =< 200mA (Io), Any Speed
Séries:-
Temps de recouvrement inverse (trr):4ns
Package / Boîte:TO-236-3, SC-59, SOT-23-3
Autres noms:1SS187LF
Température d'utilisation - Jonction:125°C (Max)
Type de montage:Surface Mount
Délai de livraison standard du fabricant:12 Weeks
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Standard
Description détaillée:Diode Standard 80V 100mA Surface Mount S-Mini
Courant - fuite, inverse à Vr:500nA @ 80V
Courant - Rectifié moyenne (Io):100mA
Capacité à Vr, F:4pF @ 0V, 1MHz
Email:[email protected]

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