Français
English Deutsch Français русский español Português Italia 한국의 العربية Türk dili polski Suomi Indonesia Tiếng Việt ภาษาไทย Nederland Pilipino Čeština 繁体中文 Magyarország Svenska Ελλάδα Български език✕
À propos de nous | Nous contacter | Demander un devis |
Accueil > Centre des produits > Produits semi-conducteurs discrets > Diodes - redresseurs - Single > 1N459A_S00Z
1N459A_S00Z
1N459A_S00Z
Modèle de produit:
1N459A_S00Z
Fabricant:
ON Semiconductor
La description:
DIODE GEN PURP 200V 500MA DO35
Statut RoHS:
Sans plomb / conforme à la directive RoHS
la quantité en dépôt:
37570 Pieces
Heure de livraison:
1-2 days (We have stocks to ship now)
Temps de production:
4-8 weeks
Fiche technique:
1N459A_S00Z.pdf
Enquête

introduction

We can supply 1N459A_S00Z, use the request quote form to request 1N459A_S00Z pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number 1N459A_S00Z.The price and lead time for 1N459A_S00Z depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# 1N459A_S00Z.We look forward to working with you to establish long-term relations of cooperation

Spécifications

Numéro de pièce interne RO-1N459A_S00Z
État Original New
Pays d'origine Contact us
Top Marking email us
Remplacement See datasheet
Tension - directe (Vf) (max) @ Si:1V @ 100mA
Tension - inverse (Vr) (max):200V
Package composant fournisseur:DO-35
La vitesse:Standard Recovery >500ns, > 200mA (Io)
Séries:-
Package / Boîte:DO-204AH, DO-35, Axial
Température d'utilisation - Jonction:175°C (Max)
Type de montage:Through Hole
Niveau de sensibilité à l'humidité (MSL):1 (Unlimited)
Statut sans plomb / Statut RoHS:Lead free / RoHS Compliant
Type de diode:Standard
Description détaillée:Diode Standard 200V 500mA Through Hole DO-35
Courant - fuite, inverse à Vr:25nA @ 175V
Courant - Rectifié moyenne (Io):500mA
Capacité à Vr, F:6pF @ 0V, 1MHz
Email:[email protected]

Requête rapide Quote

Modèle de produit
Quantité
Compagnie
Email
Téléphone
Remarques / Notes

pièces connexes 1N459A_S00Z

image Modèle de produit Fabricant La description Vue
1N4614 TR Central Semiconductor DIODE ZENER 1.8V 250MW DO35 Enquête
1N4596 GeneSiC Semiconductor DIODE GEN PURP 1.4KV 150A DO205 Enquête
1N459A_T50R Image 1N459A_T50R AMI Semiconductor / ON Semiconductor DIODE GEN PURP 200V 500MA DO35 Enquête
1N459A Image 1N459A Microsemi DIODE GEN PURP 200V 150MA DO35 Enquête
1N459ATR Image 1N459ATR AMI Semiconductor / ON Semiconductor DIODE GEN PURP 200V 500MA DO35 Enquête
1N459A Image 1N459A AMI Semiconductor / ON Semiconductor DIODE GEN PURP 200V 500MA DO35 Enquête
1N4596 Powerex, Inc. DIODE GEN PURP 1.4KV 150A DO205 Enquête
1N4596R Powerex, Inc. DIODE GEN PURP 1.4KV 150A DO205 Enquête
1N4608 Image 1N4608 Microsemi DIODE GEN PURP 85V 200MA DO35 Enquête
1N4614UR Image 1N4614UR Microsemi DIODE ZENER 1.8V 500MW DO213AA Enquête
1N4595R Image 1N4595R GeneSiC Semiconductor DIODE GEN PURP REV 1.2KV DO205AA Enquête
1N4595R Powerex, Inc. DIODE GEN PURP 1.2KV 150A DO205 Enquête
1N4615 BK Central Semiconductor DIODE ZENER 2V 250MW DO35 Enquête
1N4614 BK Central Semiconductor DIODE ZENER 1.8V 250MW DO35 Enquête
1N4614-1 Image 1N4614-1 Microsemi DIODE ZENER 1.8V 500MW DO7 Enquête
1N4607 Image 1N4607 Microsemi DIODE GEN PURP 85V 200MA DO35 Enquête
1N459A_L99Z Image 1N459A_L99Z AMI Semiconductor / ON Semiconductor DIODE GEN PURP 200V 500MA DO35 Enquête
1N4615 TR Central Semiconductor DIODE ZENER 2V 250MW DO35 Enquête
1N459TR Image 1N459TR AMI Semiconductor / ON Semiconductor DIODE GEN PURP 200V 500MA DO35 Enquête
1N4596R GeneSiC Semiconductor DIODE GEN PURP REV 1.4KV DO205AA Enquête

Latest Nouvelles