UP0411200L
UP0411200L
Osa numero:
UP0411200L
Valmistaja:
Panasonic
Kuvaus:
TRANS PREBIAS DUAL PNP SSMINI6
RoHS-tila:
Lyijytön / RoHS -yhteensopiva
Määrä varastossa:
83473 Pieces
Toimitusaika:
1-2 days (We have stocks to ship now)
Tuotantoaika:
4-8 weeks
Tietolomake:
UP0411200L.pdf

esittely

We can supply UP0411200L, use the request quote form to request UP0411200L pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number UP0411200L.The price and lead time for UP0411200L depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# UP0411200L.We look forward to working with you to establish long-term relations of cooperation

tekniset tiedot

Sisäinen osanumero RO-UP0411200L
Kunto Original New
Maa alkuperä Contact us
Alkuun Merkintä email us
Korvaus See datasheet
Jännite - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
transistori tyyppi:2 PNP - Pre-Biased (Dual)
Toimittaja Device Package:SSMINI6-F1
Sarja:-
Vastus - emitteripohja (R2):22 kOhms
Vastus - pohja (R1):22 kOhms
Virta - Max:125mW
Pakkaus:Cut Tape (CT)
Pakkaus / Case:SOT-563, SOT-666
Muut nimet:UP0411200LCT
Asennustyyppi:Surface Mount
Kosteuden herkkyys (MSL):1 (Unlimited)
Lyijytön tila / RoHS-tila:Lead free / RoHS Compliant
Taajuus - Siirtyminen:80MHz
Yksityiskohtainen kuvaus:Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 80MHz 125mW Surface Mount SSMINI6-F1
DC Nykyinen Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Nykyinen - Collector Cutoff (Max):500nA
Nykyinen - Collector (le) (Max):100mA
Email:[email protected]

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