DTC123EET1
DTC123EET1
Osa numero:
DTC123EET1
Valmistaja:
ON Semiconductor
Kuvaus:
TRANS PREBIAS NPN 200MW SC75
RoHS-tila:
Sisältää lyijy / RoHS-yhteensopiva
Määrä varastossa:
87577 Pieces
Toimitusaika:
1-2 days (We have stocks to ship now)
Tuotantoaika:
4-8 weeks
Tietolomake:
DTC123EET1.pdf

esittely

We can supply DTC123EET1, use the request quote form to request DTC123EET1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DTC123EET1.The price and lead time for DTC123EET1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DTC123EET1.We look forward to working with you to establish long-term relations of cooperation

tekniset tiedot

Sisäinen osanumero RO-DTC123EET1
Kunto Original New
Maa alkuperä Contact us
Alkuun Merkintä email us
Korvaus See datasheet
Jännite - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
transistori tyyppi:NPN - Pre-Biased
Toimittaja Device Package:SC-75, SOT-416
Sarja:-
Vastus - emitteripohja (R2):2.2 kOhms
Vastus - pohja (R1):2.2 kOhms
Virta - Max:200mW
Pakkaus:Tape & Reel (TR)
Pakkaus / Case:SC-75, SOT-416
Asennustyyppi:Surface Mount
Kosteuden herkkyys (MSL):1 (Unlimited)
Lyijytön tila / RoHS-tila:Contains lead / RoHS non-compliant
Yksityiskohtainen kuvaus:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SC-75, SOT-416
DC Nykyinen Gain (hFE) (Min) @ Ic, Vce:8 @ 5mA, 10V
Nykyinen - Collector Cutoff (Max):500nA
Nykyinen - Collector (le) (Max):100mA
Perusosan osanumero:DTC123
Email:[email protected]

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