Imagen |
Número de pieza |
Fabricantes |
Descripción |
Ver |
|
RF073M2STR |
LAPIS Semiconductor |
DIODE GEN PURP 200V 700MA PMDU |
Investigación |
|
RF064PJ912CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF071M2STR |
LAPIS Semiconductor |
DIODE GEN PURP 200V 700MA PMDU |
Investigación |
|
RF071MM2STR |
LAPIS Semiconductor |
DIODE GEN PURP 200V 700MA PMDU |
Investigación |
|
RF064PJ823CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF064PJ754CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF064PJ824CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF081M2STR |
LAPIS Semiconductor |
DIODE GEN PURP 200V 800MA PMDU |
Investigación |
|
RF064PJ822CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF064PJ913CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF081LAM2STR |
LAPIS Semiconductor |
DIODE GEN PURP 200V 1.1A PMDTM |
Investigación |
|
RF064PJ910CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF08L6STE25 |
LAPIS Semiconductor |
DIODE GEN PURP 600V 800MA PMDS |
Investigación |
|
RF071L4STE25 |
LAPIS Semiconductor |
DIODE GEN PURP 400V 1A PMDS |
Investigación |
|
RF071LAM4STR |
LAPIS Semiconductor |
DIODE GEN PURP 400V 1A PMDTM |
Investigación |
|
RF064PJ911CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF081L2STE25 |
LAPIS Semiconductor |
DIODE GEN PURP 200V 1A PMDS |
Investigación |
|
RF064PJ821CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF064PJ820CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |
|
RF064PJ914CS |
Samsung Electro-Mechanics America, Inc. |
RESISTOR ARRAY FLAT TERMINAL 0 |
Investigación |