IRLML6302GTRPBF
- Número de pieza:
- IRLML6302GTRPBF
- Descripción:
- MOSFET P-CH 20V 0.78A SOT-23-3
- Estado RoHS:
- Sin plomo / Cumple con RoHS
- Cantidad en inventario:
- 86221 Pieces
- El tiempo de entrega:
- 1-2 days (We have stocks to ship now)
- Tiempo de producción:
- 4-8 weeks
- Ficha de datos:
- IRLML6302GTRPBF.pdf
Introducción
We can supply IRLML6302GTRPBF, use the request quote form to request IRLML6302GTRPBF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRLML6302GTRPBF.The price and lead time for IRLML6302GTRPBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRLML6302GTRPBF.We look forward to working with you to establish long-term relations of cooperation
Especificaciones
| Número de parte interno | RO-IRLML6302GTRPBF |
|---|---|
| Condición | Original New |
| País de origen | Contact us |
| Marcado superior | email us |
| Reemplazo | See datasheet |
| Voltaje - Prueba: | 97pF @ 15V |
| Tensión - Desglose: | Micro3™/SOT-23 |
| VGS (th) (Max) @Id: | 600 mOhm @ 610mA, 4.5V |
| Vgs (Max): | 2.7V, 4.5V |
| Tecnología: | MOSFET (Metal Oxide) |
| Serie: | HEXFET® |
| Estado RoHS: | Tape & Reel (TR) |
| RDS (Max) @Id, Vgs: | 780mA (Ta) |
| Polarización: | TO-236-3, SC-59, SOT-23-3 |
| Otros nombres: | IRLML6302GTRPBF-ND IRLML6302GTRPBFTR SP001550492 |
| Temperatura de funcionamiento: | -55°C ~ 150°C (TJ) |
| Tipo de montaje: | Surface Mount |
| Nivel de Sensibilidad a la Humedad (MSL): | 1 (Unlimited) |
| Tiempo de entrega estándar del fabricante: | 10 Weeks |
| Número de pieza del fabricante: | IRLML6302GTRPBF |
| Capacitancia de Entrada (Ciss) (Max) @ Vds: | 3.6nC @ 4.5V |
| Tipo de IGBT: | ±12V |
| Carga de puerta (Qg) (máx.) @ Vgs: | 1.5V @ 250µA |
| Característica de FET: | P-Channel |
| Descripción ampliada: | P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23 |
| Voltaje drenaje-fuente (VDS) Las: | - |
| Descripción: | MOSFET P-CH 20V 0.78A SOT-23-3 |
| Corriente - Drenaje Continuo (Id) @ 25 ° C: | 20V |
| relación de capacidades: | 540mW (Ta) |
| Email: | [email protected] |
