IPB60R120C7ATMA1
- Número de pieza:
- IPB60R120C7ATMA1
- Descripción:
- MOSFET N-CH 650V 19A TO263-3
- Estado RoHS:
- Sin plomo / Cumple con RoHS
- Cantidad en inventario:
- 55561 Pieces
- El tiempo de entrega:
- 1-2 days (We have stocks to ship now)
- Tiempo de producción:
- 4-8 weeks
- Ficha de datos:
- IPB60R120C7ATMA1.pdf
Introducción
We can supply IPB60R120C7ATMA1, use the request quote form to request IPB60R120C7ATMA1 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IPB60R120C7ATMA1.The price and lead time for IPB60R120C7ATMA1 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IPB60R120C7ATMA1.We look forward to working with you to establish long-term relations of cooperation
Especificaciones
| Número de parte interno | RO-IPB60R120C7ATMA1 |
|---|---|
| Condición | Original New |
| País de origen | Contact us |
| Marcado superior | email us |
| Reemplazo | See datasheet |
| VGS (th) (Max) @Id: | 4V @ 390µA |
| Vgs (Max): | ±20V |
| Tecnología: | MOSFET (Metal Oxide) |
| Paquete del dispositivo: | PG-TO263-3 |
| Serie: | CoolMOS™ C7 |
| RDS (Max) @Id, Vgs: | 120 mOhm @ 7.8A, 10V |
| La disipación de energía (máximo): | 92W (Tc) |
| embalaje: | Tape & Reel (TR) |
| Paquete / Cubierta: | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
| Otros nombres: | IPB60R120C7ATMA1-ND IPB60R120C7ATMA1TR SP001385048 |
| Temperatura de funcionamiento: | -55°C ~ 150°C (TJ) |
| Tipo de montaje: | Surface Mount |
| Nivel de sensibilidad a la humedad (MSL): | 1 (Unlimited) |
| Estado sin plomo / Estado RoHS: | Lead free / RoHS Compliant |
| Capacitancia de Entrada (Ciss) (Max) @ Vds: | 1500pF @ 400V |
| Carga de puerta (Qg) (máx.) @ Vgs: | 34nC @ 10V |
| Tipo FET: | N-Channel |
| Característica de FET: | - |
| Voltaje de la Unidad (Max Rds On, Min Rds On): | 10V |
| Voltaje drenaje-fuente (VDS) Las: | 650V |
| Descripción detallada: | N-Channel 650V 19A (Tc) 92W (Tc) Surface Mount PG-TO263-3 |
| Corriente - Drenaje Continuo (Id) @ 25 ° C: | 19A (Tc) |
| Email: | [email protected] |
