TPCP8103-H(TE85LFM
TPCP8103-H(TE85LFM
Artikelnummer:
TPCP8103-H(TE85LFM
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET P-CH 40V 4.8A PS-8
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
76033 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.TPCP8103-H(TE85LFM.pdf2.TPCP8103-H(TE85LFM.pdf

Einführung

We can supply TPCP8103-H(TE85LFM, use the request quote form to request TPCP8103-H(TE85LFM pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TPCP8103-H(TE85LFM.The price and lead time for TPCP8103-H(TE85LFM depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TPCP8103-H(TE85LFM.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-TPCP8103-H(TE85LFM
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2V @ 1mA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PS-8 (2.9x2.4)
Serie:U-MOSIII-H
Rds On (Max) @ Id, Vgs:40 mOhm @ 2.4A, 10V
Verlustleistung (max):840mW (Ta)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-SMD, Flat Lead
Andere Namen:TPCP8103-H(TE85LFMCT
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:800pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:19nC @ 10V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:P-Channel 40V 4.8A (Ta) 840mW (Ta) Surface Mount PS-8 (2.9x2.4)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:4.8A (Ta)
Email:[email protected]

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