TK7A90E,S4X
TK7A90E,S4X
Artikelnummer:
TK7A90E,S4X
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
MOSFET N-CH 900V TO220SIS
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
80557 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TK7A90E,S4X.pdf

Einführung

We can supply TK7A90E,S4X, use the request quote form to request TK7A90E,S4X pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TK7A90E,S4X.The price and lead time for TK7A90E,S4X depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TK7A90E,S4X.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-TK7A90E,S4X
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 700µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-220SIS
Serie:π-MOSVIII
Rds On (Max) @ Id, Vgs:2 Ohm @ 3.5A, 10V
Verlustleistung (max):45W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3 Full Pack
Andere Namen:TK7A90E,S4X(S
TK7A90ES4X
Betriebstemperatur:150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:32nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):900V
detaillierte Beschreibung:N-Channel 900V 7A (Ta) 45W (Tc) Through Hole TO-220SIS
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:7A (Ta)
Email:[email protected]

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