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Zuhause > Produkte > Diskrete Halbleiter-Produkte > Transistoren-Bipolar (BJT)-Einzel > TBC857B,LM
TBC857B,LM
Artikelnummer:
TBC857B,LM
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
X34 PB-F SOT-23 TRANSISTOR FOR L
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
62157 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
TBC857B,LM.pdf
Anfrage

Einführung

We can supply TBC857B,LM, use the request quote form to request TBC857B,LM pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TBC857B,LM.The price and lead time for TBC857B,LM depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TBC857B,LM.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-TBC857B,LM
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:650mV @ 100mA, 5mA
Transistor-Typ:PNP
Supplier Device-Gehäuse:SOT-23
Serie:-
Leistung - max:320mW
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Andere Namen:TBC857BLMCT
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:12 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:80MHz
detaillierte Beschreibung:Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 320mW Surface Mount SOT-23
DC Stromgewinn (HFE) (Min) @ Ic, VCE:210 @ 2mA, 5V
Strom - Collector Cutoff (Max):30nA (ICBO)
Strom - Kollektor (Ic) (max):150mA
Email:[email protected]

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