STT3P2UH7
Artikelnummer:
STT3P2UH7
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET P-CH 20V 3A SOT23-6
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
33607 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
STT3P2UH7.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-STT3P2UH7
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SOT-23-6
Serie:STripFET™
Rds On (Max) @ Id, Vgs:100 mOhm @ 1.5A, 4.5V
Verlustleistung (max):1.6W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:SOT-23-6
Andere Namen:497-15156-1
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:510pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:4.8nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):1.8V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 3A (Tc) 1.6W (Tc) Surface Mount SOT-23-6
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:3A (Tc)
Email:[email protected]

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