STGWA80H65DFB
STGWA80H65DFB
Artikelnummer:
STGWA80H65DFB
Hersteller:
STMicroelectronics
Beschreibung:
IGBT BIPO 650V 80A TO247-3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
89144 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
STGWA80H65DFB.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-STGWA80H65DFB
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):650V
VCE (on) (Max) @ Vge, Ic:2V @ 15V, 80A
Testbedingung:400V, 80A, 10 Ohm, 15V
Td (ein / aus) bei 25 ° C:84ns/280ns
Schaltenergie:2.1mJ (on), 1.5mJ (off)
Supplier Device-Gehäuse:TO-247 Long Leads
Serie:-
Rückwärts-Erholzeit (Trr):85ns
Leistung - max:469W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Andere Namen:497-16007-5
STGWA80H65DFB-ND
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:Trench Field Stop
Gate-Ladung:414nC
detaillierte Beschreibung:IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247 Long Leads
Strom - Collector Pulsed (Icm):240A
Strom - Kollektor (Ic) (max):120A
Email:[email protected]

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