STGW30M65DF2
STGW30M65DF2
Artikelnummer:
STGW30M65DF2
Hersteller:
STMicroelectronics
Beschreibung:
TRENCH GATE FIELD-STOP IGBT M SE
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
37116 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
STGW30M65DF2.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-STGW30M65DF2
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):650V
VCE (on) (Max) @ Vge, Ic:2V @ 15V, 30A
Testbedingung:400V, 30A, 10 Ohm, 15V
Td (ein / aus) bei 25 ° C:31.6ns/115ns
Schaltenergie:300µJ (on), 960µJ (off)
Supplier Device-Gehäuse:TO-247
Serie:-
Rückwärts-Erholzeit (Trr):140ns
Leistung - max:258W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Andere Namen:497-16485-5
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:42 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:Trench Field Stop
Gate-Ladung:80nC
detaillierte Beschreibung:IGBT Trench Field Stop 650V 60A 258W Through Hole TO-247
Strom - Collector Pulsed (Icm):120A
Strom - Kollektor (Ic) (max):60A
Email:[email protected]

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