SIDC06D120H8X1SA2
Artikelnummer:
SIDC06D120H8X1SA2
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
DIODE GEN PURP 1.2KV 7.5A WAFER
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
60322 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
SIDC06D120H8X1SA2.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-SIDC06D120H8X1SA2
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Forward (Vf) (Max) @ If:1.97V @ 7.5A
Spannung - Sperr (Vr) (max):1200V
Supplier Device-Gehäuse:Sawn on foil
Geschwindigkeit:Standard Recovery >500ns, > 200mA (Io)
Serie:-
Verpackung:Bulk
Verpackung / Gehäuse:Die
Andere Namen:SP000527596
Betriebstemperatur - Anschluss:-40°C ~ 175°C
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:12 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Diodentyp:Standard
detaillierte Beschreibung:Diode Standard 1200V 7.5A (DC) Surface Mount Sawn on foil
Strom - Sperrleckstrom @ Vr:27µA @ 1200V
Strom - Richt (Io):7.5A (DC)
Kapazität @ Vr, F:-
Email:[email protected]

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