RN1112(T5L,F,T)
RN1112(T5L,F,T)
Artikelnummer:
RN1112(T5L,F,T)
Hersteller:
Toshiba Semiconductor and Storage
Beschreibung:
TRANS PREBIAS NPN 0.1W SSM
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
65193 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
RN1112(T5L,F,T).pdf

Einführung

We can supply RN1112(T5L,F,T), use the request quote form to request RN1112(T5L,F,T) pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RN1112(T5L,F,T).The price and lead time for RN1112(T5L,F,T) depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RN1112(T5L,F,T).We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-RN1112(T5L,F,T)
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:SSM
Serie:-
Widerstand - Basis (R1):22 kOhms
Leistung - max:100mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-75, SOT-416
Andere Namen:RN1112(T5LFT)TR
RN1112T5LFT
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:250MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 100mW Surface Mount SSM
DC Stromgewinn (HFE) (Min) @ Ic, VCE:120 @ 1mA, 5V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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