NVMFD5483NLT3G
NVMFD5483NLT3G
Artikelnummer:
NVMFD5483NLT3G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET 2N-CH 60V 6.4A 8DFN
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
46111 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NVMFD5483NLT3G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NVMFD5483NLT3G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Supplier Device-Gehäuse:8-DFN (5x6) Dual Flag (SO8FL-Dual)
Serie:-
Rds On (Max) @ Id, Vgs:36 mOhm @ 15A, 10V
Leistung - max:3.1W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:39 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:668pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:23.4nC @ 10V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):60V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 60V 6.4A 3.1W Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:6.4A
Email:[email protected]

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