NTLJD4116NT1G
NTLJD4116NT1G
Artikelnummer:
NTLJD4116NT1G
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET 2N-CH 30V 2.5A 6-WDFN
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
57615 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NTLJD4116NT1G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NTLJD4116NT1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:6-WDFN (2x2)
Serie:-
Rds On (Max) @ Id, Vgs:70 mOhm @ 2A, 4.5V
Leistung - max:710mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:6-WDFN Exposed Pad
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:427pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:6.5nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 30V 2.5A 710mW Surface Mount 6-WDFN (2x2)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:2.5A
Email:[email protected]

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