NTB082N65S3F
NTB082N65S3F
Artikelnummer:
NTB082N65S3F
Hersteller:
ON Semiconductor
Beschreibung:
SUPERFET3 650V D2PAK PKG
Menge auf Lager:
35216 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
NTB082N65S3F.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-NTB082N65S3F
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:5V @ 4mA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:D²PAK (TO-263)
Serie:SuperFET® III
Rds On (Max) @ Id, Vgs:82 mOhm @ 20A, 10V
Verlustleistung (max):313W (Tc)
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Andere Namen:NTB082N65S3FOSCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status:Lead free
Eingabekapazität (Ciss) (Max) @ Vds:3410pF @ 400V
Gate Charge (Qg) (Max) @ Vgs:81nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):650V
detaillierte Beschreibung:N-Channel 650V 40A (Tc) 313W (Tc) Surface Mount D²PAK (TO-263)
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:40A (Tc)
Email:[email protected]

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