MSD602-RT1G
MSD602-RT1G
Artikelnummer:
MSD602-RT1G
Hersteller:
ON Semiconductor
Beschreibung:
TRANS NPN 50V 0.5A SC59
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
39871 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
MSD602-RT1G.pdf

Einführung

We can supply MSD602-RT1G, use the request quote form to request MSD602-RT1G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number MSD602-RT1G.The price and lead time for MSD602-RT1G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# MSD602-RT1G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-MSD602-RT1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:600mV @ 30mA, 300mA
Transistor-Typ:NPN
Supplier Device-Gehäuse:SC-59
Serie:-
Leistung - max:200mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Andere Namen:MSD602-RT1GOS
MSD602-RT1GOS-ND
MSD602-RT1GOSTR
MSD602RT1G
Betriebstemperatur:150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:10 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:-
detaillierte Beschreibung:Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59
DC Stromgewinn (HFE) (Min) @ Ic, VCE:120 @ 150mA, 10V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):500mA
Email:[email protected]

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