MMUN2216LT1G
MMUN2216LT1G
Artikelnummer:
MMUN2216LT1G
Hersteller:
ON Semiconductor
Beschreibung:
TRANS PREBIAS NPN 0.4W SOT23-3
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
47875 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
MMUN2216LT1G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-MMUN2216LT1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:SOT-23-3 (TO-236)
Serie:-
Widerstand - Basis (R1):4.7 kOhms
Leistung - max:400mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Andere Namen:MMUN2216LT1GOS
MMUN2216LT1GOS-ND
MMUN2216LT1GOSTR
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:36 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 400mW Surface Mount SOT-23-3 (TO-236)
DC Stromgewinn (HFE) (Min) @ Ic, VCE:160 @ 5mA, 10V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA
Basisteilenummer:MMUN22**L
Email:[email protected]

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