MJD5731T4G
MJD5731T4G
Artikelnummer:
MJD5731T4G
Hersteller:
ON Semiconductor
Beschreibung:
TRANS PNP 350V 1A DPAK
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
81602 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
MJD5731T4G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-MJD5731T4G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):1A
Spannung - Durchschlag:DPAK-3
VCE Sättigung (Max) @ Ib, Ic:350V
Serie:-
RoHS Status:Tape & Reel (TR)
Widerstand - Base (R1) (Ohm):10MHz
Leistung - max:1.56W
Polarisation:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere Namen:MJD5731T4G-ND
MJD5731T4GOSTR
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsstufe (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:6 Weeks
Hersteller-Teilenummer:MJD5731T4G
Frequenz - Übergang:30 @ 300mA, 10V
Expanded Beschreibung:Bipolar (BJT) Transistor PNP 350V 1A 10MHz 1.56W Surface Mount DPAK-3
Beschreibung:TRANS PNP 350V 1A DPAK
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100µA
Strom - Collector Cutoff (Max):1V @ 200mA, 1A
Strom - Kollektor (Ic) (max):PNP
Email:[email protected]

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