IRLM210ATF
Artikelnummer:
IRLM210ATF
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 200V 770MA SOT-223
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
60358 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
1.IRLM210ATF.pdf2.IRLM210ATF.pdf

Einführung

We can supply IRLM210ATF, use the request quote form to request IRLM210ATF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRLM210ATF.The price and lead time for IRLM210ATF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRLM210ATF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IRLM210ATF
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SOT-223-4
Serie:-
Rds On (Max) @ Id, Vgs:1.5 Ohm @ 390mA, 5V
Verlustleistung (max):1.8W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:TO-261-4, TO-261AA
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:240pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:9nC @ 5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):5V
Drain-Source-Spannung (Vdss):200V
detaillierte Beschreibung:N-Channel 200V 770mA (Ta) 1.8W (Tc) Surface Mount SOT-223-4
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:770mA (Ta)
Email:[email protected]

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