IRF8915TRPBF
IRF8915TRPBF
Artikelnummer:
IRF8915TRPBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
66340 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IRF8915TRPBF.pdf

Einführung

We can supply IRF8915TRPBF, use the request quote form to request IRF8915TRPBF pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF8915TRPBF.The price and lead time for IRF8915TRPBF depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRF8915TRPBF.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IRF8915TRPBF
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Supplier Device-Gehäuse:8-SO
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:18.3 mOhm @ 8.9A, 10V
Leistung - max:2W
Verpackung:Cut Tape (CT)
Verpackung / Gehäuse:8-SOIC (0.154", 3.90mm Width)
Andere Namen:*IRF8915TRPBF
IRF8915PBFCT
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:540pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:7.4nC @ 4.5V
Typ FET:2 N-Channel (Dual)
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) 20V 8.9A 2W Surface Mount 8-SO
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:8.9A
Basisteilenummer:IRF8915PBF
Email:[email protected]

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