IRF7335D1TR
Artikelnummer:
IRF7335D1TR
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET 2N-CH 30V 10A 14-SOIC
RoHS-Status:
Enthält Blei / RoHS nicht konform
Menge auf Lager:
67316 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IRF7335D1TR.pdf

Einführung

We can supply IRF7335D1TR, use the request quote form to request IRF7335D1TR pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IRF7335D1TR.The price and lead time for IRF7335D1TR depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IRF7335D1TR.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-IRF7335D1TR
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1V @ 250µA
Supplier Device-Gehäuse:14-SOIC
Serie:FETKY™
Rds On (Max) @ Id, Vgs:17.5 mOhm @ 10A, 4.5V
Leistung - max:2W
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:14-SOIC (0.154", 3.90mm Width)
Andere Namen:Q1902365
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Contains lead / RoHS non-compliant
Eingabekapazität (Ciss) (Max) @ Vds:1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:20nC @ 4.5V
Typ FET:2 N-Channel (Dual) Asymmetrical
FET-Merkmal:Logic Level Gate
Drain-Source-Spannung (Vdss):30V
detaillierte Beschreibung:Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 10A 2W Surface Mount 14-SOIC
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:10A
Email:[email protected]

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