IRF6614TRPBF
IRF6614TRPBF
Artikelnummer:
IRF6614TRPBF
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 40V 12.7A DIRECTFET
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
88044 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IRF6614TRPBF.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-IRF6614TRPBF
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2.25V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:DIRECTFET™ ST
Serie:HEXFET®
Rds On (Max) @ Id, Vgs:8.3 mOhm @ 12.7A, 10V
Verlustleistung (max):2.1W (Ta), 42W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:DirectFET™ Isometric ST
Andere Namen:IRF6614TRPBFTR
SP001527924
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:2560pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:29nC @ 4.5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):40V
detaillierte Beschreibung:N-Channel 40V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:12.7A (Ta), 55A (Tc)
Email:[email protected]

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