IPP023NE7N3GXKSA1
IPP023NE7N3GXKSA1
Artikelnummer:
IPP023NE7N3GXKSA1
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 75V 120A TO220
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
62232 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IPP023NE7N3GXKSA1.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-IPP023NE7N3GXKSA1
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:3.8V @ 273µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PG-TO220-3-1
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:2.3 mOhm @ 100A, 10V
Verlustleistung (max):300W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-220-3
Andere Namen:IPP023NE7N3 G
IPP023NE7N3 G E8177
IPP023NE7N3 G E8177-ND
IPP023NE7N3 G-ND
IPP023NE7N3 GTR
IPP023NE7N3 GTR-ND
IPP023NE7N3GE8177AKSA1
SP000641722
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:14400pF @ 37.5V
Gate Charge (Qg) (Max) @ Vgs:206nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):75V
detaillierte Beschreibung:N-Channel 75V 120A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:120A (Tc)
Email:[email protected]

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