IPP023NE7N3 G
IPP023NE7N3 G
Artikelnummer:
IPP023NE7N3 G
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 75V 120A TO220
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
84902 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
IPP023NE7N3 G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-IPP023NE7N3 G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Prüfung:14400pF @ 37.5V
Spannung - Durchschlag:-
VGS (th) (Max) @ Id:2.3 mOhm @ 100A, 10V
Technologie:MOSFET (Metal Oxide)
Serie:OptiMOS™
RoHS Status:Cut Tape (CT)
Rds On (Max) @ Id, Vgs:120A (Tc)
Polarisation:TO-220-3
Andere Namen:IPP023NE7N3 GCT
Betriebstemperatur:-55°C ~ 175°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsstufe (MSL):1 (Unlimited)
Hersteller-Teilenummer:IPP023NE7N3 G
Eingabekapazität (Ciss) (Max) @ Vds:206nC @ 10V
Gate Charge (Qg) (Max) @ Vgs:3.8V @ 273µA
FET-Merkmal:N-Channel
Expanded Beschreibung:N-Channel 75V 120A (Tc) 300W (Tc) Through Hole
Drain-Source-Spannung (Vdss):-
Beschreibung:MOSFET N-CH 75V 120A TO220
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:75V
Kapazitätsverhältnis:300W (Tc)
Email:[email protected]

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