HGTG20N60B3D
HGTG20N60B3D
Artikelnummer:
HGTG20N60B3D
Hersteller:
ON Semiconductor
Beschreibung:
IGBT 600V 40A 165W TO247
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
51253 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
HGTG20N60B3D.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-HGTG20N60B3D
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE (on) (Max) @ Vge, Ic:2V @ 15V, 20A
Testbedingung:-
Td (ein / aus) bei 25 ° C:-
Schaltenergie:475µJ (on), 1.05mJ (off)
Supplier Device-Gehäuse:TO-247
Serie:-
Rückwärts-Erholzeit (Trr):55ns
Leistung - max:165W
Verpackung:Tube
Verpackung / Gehäuse:TO-247-3
Andere Namen:HGTG20N60B3D-ND
HGTG20N60B3DFS
Betriebstemperatur:-40°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:-
Gate-Ladung:80nC
detaillierte Beschreibung:IGBT 600V 40A 165W Through Hole TO-247
Strom - Collector Pulsed (Icm):160A
Strom - Kollektor (Ic) (max):40A
Basisteilenummer:HGTG20N60
Email:[email protected]

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