FJNS3212RBU
FJNS3212RBU
Artikelnummer:
FJNS3212RBU
Hersteller:
ON Semiconductor
Beschreibung:
TRANS PREBIAS NPN 300MW TO92S
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
37371 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FJNS3212RBU.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-FJNS3212RBU
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):40V
VCE Sättigung (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:TO-92S
Serie:-
Widerstand - Basis (R1):47 kOhms
Leistung - max:300mW
Verpackung:Bulk
Verpackung / Gehäuse:TO-226-3, TO-92-3 Short Body
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Frequenz - Übergang:250MHz
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40V 100mA 250MHz 300mW Through Hole TO-92S
DC Stromgewinn (HFE) (Min) @ Ic, VCE:100 @ 1mA, 5V
Strom - Collector Cutoff (Max):100nA (ICBO)
Strom - Kollektor (Ic) (max):100mA
Email:[email protected]

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