FGD3N60LSDTM-T
Artikelnummer:
FGD3N60LSDTM-T
Hersteller:
ON Semiconductor
Beschreibung:
INTEGRATED CIRCUIT
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
51819 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FGD3N60LSDTM-T.pdf

Einführung

We can supply FGD3N60LSDTM-T, use the request quote form to request FGD3N60LSDTM-T pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FGD3N60LSDTM-T.The price and lead time for FGD3N60LSDTM-T depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FGD3N60LSDTM-T.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-FGD3N60LSDTM-T
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):600V
VCE (on) (Max) @ Vge, Ic:1.5V @ 10V, 3A
Testbedingung:480V, 3A, 470 Ohm, 10V
Td (ein / aus) bei 25 ° C:40ns/600ns
Schaltenergie:250µJ (on), 1mJ (off)
Supplier Device-Gehäuse:TO-252, (D-Pak)
Serie:-
Rückwärts-Erholzeit (Trr):234ns
Leistung - max:40W
Verpackung / Gehäuse:TO-252-3, DPak (2 Leads + Tab), SC-63
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabetyp:Standard
IGBT-Typ:-
Gate-Ladung:12.5nC
detaillierte Beschreibung:IGBT 600V 6A 40W Surface Mount TO-252, (D-Pak)
Strom - Collector Pulsed (Icm):25A
Strom - Kollektor (Ic) (max):6A
Email:[email protected]

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