FDN338P_G
Artikelnummer:
FDN338P_G
Hersteller:
ON Semiconductor
Beschreibung:
INTEGRATED CIRCUIT
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
57183 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FDN338P_G.pdf

Einführung

We can supply FDN338P_G, use the request quote form to request FDN338P_G pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number FDN338P_G.The price and lead time for FDN338P_G depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# FDN338P_G.We look forward to working with you to establish long-term relations of cooperation

Spezifikation

Interne Teilenummer RO-FDN338P_G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:1.5V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:SuperSOT-3
Serie:PowerTrench®
Rds On (Max) @ Id, Vgs:115 mOhm @ 1.6A, 4.5V
Verlustleistung (max):500mW (Ta)
Verpackung:Bulk
Verpackung / Gehäuse:TO-236-3, SC-59, SOT-23-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:451pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:6.2nC @ 4.5V
Typ FET:P-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):2.5V, 4.5V
Drain-Source-Spannung (Vdss):20V
detaillierte Beschreibung:P-Channel 20V 1.6A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:1.6A (Ta)
Email:[email protected]

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