FCA76N60N
FCA76N60N
Artikelnummer:
FCA76N60N
Hersteller:
ON Semiconductor
Beschreibung:
MOSFET N-CH 600V 76A TO-3PN
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
71324 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
FCA76N60N.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-FCA76N60N
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:TO-3PN
Serie:SupreMOS™
Rds On (Max) @ Id, Vgs:36 mOhm @ 38A, 10V
Verlustleistung (max):543W (Tc)
Verpackung:Tube
Verpackung / Gehäuse:TO-3P-3, SC-65-3
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Through Hole
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:12385pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:285nC @ 10V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):10V
Drain-Source-Spannung (Vdss):600V
detaillierte Beschreibung:N-Channel 600V 76A (Tc) 543W (Tc) Through Hole TO-3PN
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:76A (Tc)
Email:[email protected]

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