DTC115EET1G
DTC115EET1G
Artikelnummer:
DTC115EET1G
Hersteller:
ON Semiconductor
Beschreibung:
TRANS PREBIAS NPN 200MW SC75
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
63514 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
DTC115EET1G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-DTC115EET1G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):50V
VCE Sättigung (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Transistor-Typ:NPN - Pre-Biased
Supplier Device-Gehäuse:SC-75, SOT-416
Serie:-
Widerstand - Emitterbasis (R2):100 kOhms
Widerstand - Basis (R1):100 kOhms
Leistung - max:200mW
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:SC-75, SOT-416
Andere Namen:DTC115EET1GOS
DTC115EET1GOS-ND
DTC115EET1GOSTR
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Hersteller Standard Vorlaufzeit:2 Weeks
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
detaillierte Beschreibung:Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SC-75, SOT-416
DC Stromgewinn (HFE) (Min) @ Ic, VCE:80 @ 5mA, 10V
Strom - Collector Cutoff (Max):500nA
Strom - Kollektor (Ic) (max):100mA
Basisteilenummer:DTC115
Email:[email protected]

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