DF200R12W1H3B27BOMA1
Artikelnummer:
DF200R12W1H3B27BOMA1
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
IGBT MODULE VCES 1200V 200A
Menge auf Lager:
52651 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
DF200R12W1H3B27BOMA1.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-DF200R12W1H3B27BOMA1
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
Spannung - Kollektor-Emitter-Durchbruch (max):1200V
VCE (on) (Max) @ Vge, Ic:1.3V @ 15V, 30A
Supplier Device-Gehäuse:Module
Serie:-
Leistung - max:375W
Verpackung / Gehäuse:Module
Andere Namen:DF200R12W1H3_B27
DF200R12W1H3_B27-ND
SP001056182
Betriebstemperatur:-40°C ~ 150°C
NTC-Thermistor:Yes
Befestigungsart:Chassis Mount
Eingangskapazität (Cíes) @ VCE:2nF @ 25V
Eingang:Standard
IGBT-Typ:-
detaillierte Beschreibung:IGBT Module 2 Independent 1200V 30A 375W Chassis Mount Module
Strom - Collector Cutoff (Max):1mA
Strom - Kollektor (Ic) (max):30A
Konfiguration:2 Independent
Email:[email protected]

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