BSC029N025S G
BSC029N025S G
Artikelnummer:
BSC029N025S G
Hersteller:
International Rectifier (Infineon Technologies)
Beschreibung:
MOSFET N-CH 25V 100A TDSON-8
RoHS-Status:
Bleifrei / RoHS-konform
Menge auf Lager:
68287 Pieces
Lieferzeit:
1-2 days (We have stocks to ship now)
Produktionszeit:
4-8 weeks
Datenblatt:
BSC029N025S G.pdf

Einführung

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Spezifikation

Interne Teilenummer RO-BSC029N025S G
Bedingung Original New
Herkunftsland Contact us
Top-Markierung email us
Ersatz See datasheet
VGS (th) (Max) @ Id:2V @ 80µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Supplier Device-Gehäuse:PG-TDSON-8
Serie:OptiMOS™
Rds On (Max) @ Id, Vgs:2.9 mOhm @ 50A, 10V
Verlustleistung (max):2.8W (Ta), 78W (Tc)
Verpackung:Tape & Reel (TR)
Verpackung / Gehäuse:8-PowerTDFN
Andere Namen:BSC029N025S G-ND
BSC029N025SGINTR
BSC029N025SGXT
SP000095465
Betriebstemperatur:-55°C ~ 150°C (TJ)
Befestigungsart:Surface Mount
Feuchtigkeitsempfindlichkeitsniveau (MSL):1 (Unlimited)
Bleifreier Status / RoHS-Status:Lead free / RoHS Compliant
Eingabekapazität (Ciss) (Max) @ Vds:5090pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:41nC @ 5V
Typ FET:N-Channel
FET-Merkmal:-
Antriebsspannung (Max Rds On, Min Rds On):4.5V, 10V
Drain-Source-Spannung (Vdss):25V
detaillierte Beschreibung:N-Channel 25V 24A (Ta), 100A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount PG-TDSON-8
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C:24A (Ta), 100A (Tc)
Email:[email protected]

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