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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > RV2C002UNT2L
RV2C002UNT2L
RV2C002UNT2L
Part Number:
RV2C002UNT2L
Výrobce:
LAPIS Semiconductor
Popis:
MOSFET N-CH 20V 0.18A VML1006
Stav RoHS:
Bez olova / V souladu RoHS
Množství na skladě:
46861 Pieces
Čas doručení:
1-2 days (We have stocks to ship now)
Doba výroby:
4-8 weeks
Datový list:
1.RV2C002UNT2L.pdf2.RV2C002UNT2L.pdf
Dotaz

Úvod

We can supply RV2C002UNT2L, use the request quote form to request RV2C002UNT2L pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number RV2C002UNT2L.The price and lead time for RV2C002UNT2L depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# RV2C002UNT2L.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Číslo interní součásti RO-RV2C002UNT2L
Stav Original New
Země původu Contact us
Nejlepší značení email us
Výměna, nahrazení See datasheet
Vgs (th) (max) 'Id:1V @ 100µA
Vgs (Max):±10V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:DFN1006-3 (VML1006)
Série:-
RDS On (Max) @ Id, Vgs:2 Ohm @ 150mA, 4.5V
Ztráta energie (Max):100mW (Ta)
Obal:Tape & Reel (TR)
Paket / krabice:SC-101, SOT-883
Ostatní jména:RV2C002UNT2LTR
Provozní teplota:150°C (TJ)
Typ montáže:Surface Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Výrobní standardní doba výroby:10 Weeks
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:12pF @ 10V
Typ FET:N-Channel
FET Feature:-
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):1.2V, 4.5V
Drain na zdroj napětí (Vdss):20V
Detailní popis:N-Channel 20V 180mA (Ta) 100mW (Ta) Surface Mount DFN1006-3 (VML1006)
Proud - kontinuální odtok (Id) @ 25 ° C:180mA (Ta)
Email:[email protected]

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