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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FETs, MOSFETs - Single > IXTH1N170DHV
IXTH1N170DHV
IXTH1N170DHV
Part Number:
IXTH1N170DHV
Výrobce:
IXYS Corporation
Popis:
MOSFET N-CH
Množství na skladě:
31558 Pieces
Čas doručení:
1-2 days (We have stocks to ship now)
Doba výroby:
4-8 weeks
Datový list:
IXTH1N170DHV.pdf
Dotaz

Úvod

We can supply IXTH1N170DHV, use the request quote form to request IXTH1N170DHV pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number IXTH1N170DHV.The price and lead time for IXTH1N170DHV depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# IXTH1N170DHV.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Číslo interní součásti RO-IXTH1N170DHV
Stav Original New
Země původu Contact us
Nejlepší značení email us
Výměna, nahrazení See datasheet
Vgs (th) (max) 'Id:4.5V @ 250µA
Vgs (Max):±20V
Technika:MOSFET (Metal Oxide)
Dodavatel zařízení Package:TO-247HV
Série:-
RDS On (Max) @ Id, Vgs:16 Ohm @ 500mA, 0V
Ztráta energie (Max):290W (Tc)
Paket / krabice:TO-247-3 Variant
Provozní teplota:-55°C ~ 150°C (TJ)
Typ montáže:Through Hole
Výrobní standardní doba výroby:24 Weeks
Vstupní kapacita (Ciss) (Max) @ Vds:3090pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:47nC @ 5V
Typ FET:N-Channel
FET Feature:Depletion Mode
Napětí měniče (max. Zap. RDS, min. Zap. Zap.):0V
Drain na zdroj napětí (Vdss):1700V
Detailní popis:N-Channel 1700V 1A (Tj) 290W (Tc) Through Hole TO-247HV
Proud - kontinuální odtok (Id) @ 25 ° C:1A (Tj)
Email:[email protected]

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