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domů > produkty > Diskrétní polovodičové produkty > Tranzistory - FET, MOSFETy - Pole > APTM100A13SCG
APTM100A13SCG
APTM100A13SCG
Part Number:
APTM100A13SCG
Výrobce:
Microsemi
Popis:
MOSFET 2N-CH 1000V 65A SP6
Stav RoHS:
Bez olova / V souladu RoHS
Množství na skladě:
43147 Pieces
Čas doručení:
1-2 days (We have stocks to ship now)
Doba výroby:
4-8 weeks
Datový list:
APTM100A13SCG.pdf
Dotaz

Úvod

We can supply APTM100A13SCG, use the request quote form to request APTM100A13SCG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number APTM100A13SCG.The price and lead time for APTM100A13SCG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# APTM100A13SCG.We look forward to working with you to establish long-term relations of cooperation

Specifikace

Číslo interní součásti RO-APTM100A13SCG
Stav Original New
Země původu Contact us
Nejlepší značení email us
Výměna, nahrazení See datasheet
Vgs (th) (max) 'Id:5V @ 6mA
Dodavatel zařízení Package:SP6
Série:-
RDS On (Max) @ Id, Vgs:156 mOhm @ 32.5A, 10V
Power - Max:1250W
Obal:Bulk
Paket / krabice:SP6
Ostatní jména:APTM100A13SCGMI
APTM100A13SCGMI-ND
Provozní teplota:-40°C ~ 150°C (TJ)
Typ montáže:Chassis Mount
Úroveň citlivosti na vlhkost (MSL):1 (Unlimited)
Výrobní standardní doba výroby:32 Weeks
Stav volného vedení / RoHS:Lead free / RoHS Compliant
Vstupní kapacita (Ciss) (Max) @ Vds:15200pF @ 25V
Nabíjení brány (Qg) (Max) @ Vgs:562nC @ 10V
Typ FET:2 N-Channel (Half Bridge)
FET Feature:Standard
Drain na zdroj napětí (Vdss):1000V (1kV)
Detailní popis:Mosfet Array 2 N-Channel (Half Bridge) 1000V (1kV) 65A 1250W Chassis Mount SP6
Proud - kontinuální odtok (Id) @ 25 ° C:65A
Email:[email protected]

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