內部型號 | RO-TPH2R506PL,L1Q |
---|---|
狀況 | Original New |
原產地 | Contact us |
頂部標記 | email us |
替代 | See datasheet |
VGS(TH)(最大)@標識: | 2.5V @ 500µA |
Vgs(最大): | ±20V |
技術: | MOSFET (Metal Oxide) |
供應商設備封裝: | 8-SOP Advance (5x5) |
系列: | U-MOSIX-H |
RDS(ON)(最大值)@標識,柵極電壓: | 4.4 mOhm @ 30A, 4.5V |
功率耗散(最大): | 132W (Tc) |
封装: | Tape & Reel (TR) |
封裝/箱體: | 8-PowerVDFN |
其他名稱: | TPH2R506PL,L1Q(M TPH2R506PLL1Q TPH2R506PLL1QTR |
工作溫度: | 175°C (TJ) |
安裝類型: | Surface Mount |
無鉛狀態/ RoHS狀態: | Lead free / RoHS Compliant |
輸入電容(Ciss)(Max)@ Vds: | 5435pF @ 30V |
柵極電荷(Qg)(Max)@ Vgs: | 60nC @ 10V |
FET型: | N-Channel |
FET特點: | - |
驅動電壓(最大Rds開,最小Rds開): | 4.5V, 10V |
漏極至源極電壓(Vdss): | 60V |
詳細說明: | N-Channel 60V 100A (Tc) 132W (Tc) Surface Mount 8-SOP Advance (5x5) |
電流 - 25°C連續排水(Id): | 100A (Tc) |
Email: | [email protected] |