NP80N055NDG-S18-AY
Artikelnummer:
NP80N055NDG-S18-AY
Tillverkare:
Renesas Electronics America
Beskrivning:
MOSFET N-CH 55V 80A TO-262
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
35427 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
NP80N055NDG-S18-AY.pdf

Introduktion

We can supply NP80N055NDG-S18-AY, use the request quote form to request NP80N055NDG-S18-AY pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number NP80N055NDG-S18-AY.The price and lead time for NP80N055NDG-S18-AY depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# NP80N055NDG-S18-AY.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-NP80N055NDG-S18-AY
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-262
Serier:-
Rds On (Max) @ Id, Vgs:6.9 mOhm @ 40A, 10V
Effektdissipation (Max):1.8W (Ta), 115W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-262-3 Long Leads, I²Pak, TO-262AA
Driftstemperatur:175°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:6900pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:135nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):4.5V, 10V
Avlopp till källspänning (Vdss):55V
detaljerad beskrivning:N-Channel 55V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-262
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:80A (Tc)
Email:[email protected]

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