FCP260N65S3
Artikelnummer:
FCP260N65S3
Tillverkare:
ON Semiconductor
Beskrivning:
MOSFET N-CH 650V 260MOHM TO220
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
84020 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
FCP260N65S3.pdf

Introduktion

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Specifikationer

Internt delnummer RO-FCP260N65S3
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:4.5V @ 1.2mA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-220-3
Serier:SuperFET® III
Rds On (Max) @ Id, Vgs:260 mOhm @ 6A, 10V
Effektdissipation (Max):90W (Tc)
Förpackning / Fodral:TO-220-3
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:1010pF @ 400V
Gate Laddning (Qg) (Max) @ Vgs:24nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):650V
detaljerad beskrivning:N-Channel 650V 12A (Tc) 90W (Tc) Through Hole TO-220-3
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:12A (Tc)
Email:[email protected]

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