DMG4N65CTI
DMG4N65CTI
Artikelnummer:
DMG4N65CTI
Tillverkare:
Diodes Incorporated
Beskrivning:
MOSFET N-CH 650V 4A ITO-220AB
RoHS-status:
Innehåller bly / RoHS-kompatibel
Antal i lager:
52337 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
DMG4N65CTI.pdf

Introduktion

We can supply DMG4N65CTI, use the request quote form to request DMG4N65CTI pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number DMG4N65CTI.The price and lead time for DMG4N65CTI depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# DMG4N65CTI.We look forward to working with you to establish long-term relations of cooperation

Specifikationer

Internt delnummer RO-DMG4N65CTI
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:ITO-220AB
Serier:-
Rds On (Max) @ Id, Vgs:3 Ohm @ 2A, 10V
Effektdissipation (Max):8.35W (Ta)
Förpackning:Tube
Förpackning / Fodral:TO-220-3 Full Pack, Isolated Tab
Andra namn:DMG4N65CTIDI
Driftstemperatur:-55°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Tillverkarens normala ledtid:16 Weeks
Ledningsfri status / RoHS-status:Contains lead / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:900pF @ 25V
Gate Laddning (Qg) (Max) @ Vgs:13.5nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):650V
detaljerad beskrivning:N-Channel 650V 4A (Tc) 8.35W (Ta) Through Hole ITO-220AB
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

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