AOI4T60P
AOI4T60P
Artikelnummer:
AOI4T60P
Tillverkare:
Alpha and Omega Semiconductor, Inc.
Beskrivning:
MOSFET N-CH
RoHS-status:
Blyfri / Överensstämmer med RoHS
Antal i lager:
41539 Pieces
Leveranstid:
1-2 days (We have stocks to ship now)
Produktionstid:
4-8 weeks
Datablad:
1.AOI4T60P.pdf2.AOI4T60P.pdf

Introduktion

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Specifikationer

Internt delnummer RO-AOI4T60P
Tillstånd Original New
Ursprungsland Contact us
Toppmarkering email us
Ersättning See datasheet
Vgs (th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Teknologi:MOSFET (Metal Oxide)
Leverantörs Device Package:TO-251
Serier:-
Rds On (Max) @ Id, Vgs:2.1 Ohm @ 2A, 10V
Effektdissipation (Max):83W (Tc)
Förpackning:Tube
Förpackning / Fodral:TO-251-3 Stub Leads, IPak
Driftstemperatur:-50°C ~ 150°C (TJ)
Monteringstyp:Through Hole
Fuktkänslighetsnivå (MSL):1 (Unlimited)
Ledningsfri status / RoHS-status:Lead free / RoHS Compliant
Inputkapacitans (Ciss) (Max) @ Vds:522pF @ 100V
Gate Laddning (Qg) (Max) @ Vgs:15nC @ 10V
FET-typ:N-Channel
FET-funktionen:-
Drivspänning (Max Rds På, Min Rds På):10V
Avlopp till källspänning (Vdss):600V
detaljerad beskrivning:N-Channel 600V 4A (Tc) 83W (Tc) Through Hole TO-251
Ström - Kontinuerlig avlopp (Id) @ 25 ° C:4A (Tc)
Email:[email protected]

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