TSM120NA03CR RLG
TSM120NA03CR RLG
Onderdeel nummer:
TSM120NA03CR RLG
Fabrikant:
TSC (Taiwan Semiconductor)
Beschrijving:
MOSFET N-CH 30V 39A 8PDFN
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
56328 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
TSM120NA03CR RLG.pdf

Invoering

We can supply TSM120NA03CR RLG, use the request quote form to request TSM120NA03CR RLG pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number TSM120NA03CR RLG.The price and lead time for TSM120NA03CR RLG depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# TSM120NA03CR RLG.We look forward to working with you to establish long-term relations of cooperation

bestek

Intern onderdeelnummer RO-TSM120NA03CR RLG
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:8-PDFN (5x6)
Serie:-
Rds On (Max) @ Id, VGS:11.7 mOhm @ 11A, 10V
Vermogensverlies (Max):33W (Tc)
Packaging:Cut Tape (CT)
Verpakking / doos:8-PowerTDFN
Andere namen:TSM120NA03CR RLGCT
TSM120NA03CR RLGCT-ND
TSM120NA03CRRLGCT
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Fabrikant Standaard Levertijd:28 Weeks
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:562pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:9.2nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):4.5V, 10V
Drain naar de Bron Voltage (Vdss):30V
gedetailleerde beschrijving:N-Channel 30V 39A (Tc) 33W (Tc) Surface Mount 8-PDFN (5x6)
Current - Continuous Drain (Id) @ 25 ° C:39A (Tc)
Email:[email protected]

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