SIHD7N60E-GE3
SIHD7N60E-GE3
Onderdeel nummer:
SIHD7N60E-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET N-CH 600V 7A TO-252
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
40690 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
SIHD7N60E-GE3.pdf

Invoering

We can supply SIHD7N60E-GE3, use the request quote form to request SIHD7N60E-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SIHD7N60E-GE3.The price and lead time for SIHD7N60E-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SIHD7N60E-GE3.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-SIHD7N60E-GE3
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:D-Pak
Serie:-
Rds On (Max) @ Id, VGS:600 mOhm @ 3.5A, 10V
Vermogensverlies (Max):78W (Tc)
Packaging:Bulk
Verpakking / doos:TO-252-3, DPak (2 Leads + Tab), SC-63
Andere namen:SIHD7N60EGE3
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:680pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:40nC @ 10V
FET Type:N-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):10V
Drain naar de Bron Voltage (Vdss):600V
gedetailleerde beschrijving:N-Channel 600V 7A (Tc) 78W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25 ° C:7A (Tc)
Email:[email protected]

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