SI5401DC-T1-GE3
SI5401DC-T1-GE3
Onderdeel nummer:
SI5401DC-T1-GE3
Fabrikant:
Electro-Films (EFI) / Vishay
Beschrijving:
MOSFET P-CH 20V 5.2A 1206-8
RoHS-status:
Loodvrij / RoHS-conform
hoeveelheid in voorraad:
53738 Pieces
Aflevertijd:
1-2 days (We have stocks to ship now)
Productie tijd:
4-8 weeks
Data papier:
SI5401DC-T1-GE3.pdf

Invoering

We can supply SI5401DC-T1-GE3, use the request quote form to request SI5401DC-T1-GE3 pirce and lead time.XXX.com a professional electronic components distributor. With 3+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI5401DC-T1-GE3.The price and lead time for SI5401DC-T1-GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part# SI5401DC-T1-GE3.We look forward to working with you to establish long-term relations of cooperation

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Intern onderdeelnummer RO-SI5401DC-T1-GE3
Staat Original New
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Vervanging See datasheet
VGS (th) (Max) @ Id:1V @ 250µA
Vgs (Max):±8V
Technologie:MOSFET (Metal Oxide)
Leverancier Device Pakket:1206-8 ChipFET™
Serie:TrenchFET®
Rds On (Max) @ Id, VGS:32 mOhm @ 5.2A, 4.5V
Vermogensverlies (Max):1.3W (Ta)
Packaging:Tape & Reel (TR)
Verpakking / doos:8-SMD, Flat Lead
Temperatuur:-55°C ~ 150°C (TJ)
montage Type:Surface Mount
Vochtgevoeligheidsniveau (MSL):1 (Unlimited)
Loodvrije status / RoHS-status:Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs:25nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan):1.8V, 4.5V
Drain naar de Bron Voltage (Vdss):20V
gedetailleerde beschrijving:P-Channel 20V 5.2A (Ta) 1.3W (Ta) Surface Mount 1206-8 ChipFET™
Current - Continuous Drain (Id) @ 25 ° C:5.2A (Ta)
Email:[email protected]

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