Intern onderdeelnummer | RO-SI4642DY-T1-E3 |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Technologie: | MOSFET (Metal Oxide) |
Leverancier Device Pakket: | 8-SO |
Serie: | TrenchFET® |
Rds On (Max) @ Id, VGS: | 3.75 mOhm @ 20A, 10V |
Vermogensverlies (Max): | 3.5W (Ta), 7.8W (Tc) |
Packaging: | Original-Reel® |
Verpakking / doos: | 8-SOIC (0.154", 3.90mm Width) |
Andere namen: | SI4642DY-T1-E3DKR |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Surface Mount |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Loodvrije status / RoHS-status: | Lead free / RoHS Compliant |
Input Capacitance (Ciss) (Max) @ Vds: | 5540pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 110nC @ 10V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 4.5V, 10V |
Drain naar de Bron Voltage (Vdss): | 30V |
gedetailleerde beschrijving: | N-Channel 30V 34A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SO |
Current - Continuous Drain (Id) @ 25 ° C: | 34A (Tc) |
Email: | [email protected] |