Intern onderdeelnummer | RO-E3M0120090D |
---|---|
Staat | Original New |
Land van oorsprong | Contact us |
Top Markering | email us |
Vervanging | See datasheet |
VGS (th) (Max) @ Id: | 3.5V @ 3mA |
Vgs (Max): | +18V, -8V |
Technologie: | SiCFET (Silicon Carbide) |
Leverancier Device Pakket: | TO-247-3 |
Serie: | Automotive, AEC-Q101, E |
RoHS-status: | RoHS Compliant |
Rds On (Max) @ Id, VGS: | 155 mOhm @ 15A, 15V |
Vermogensverlies (Max): | 97W (Tc) |
Packaging: | Tube |
Verpakking / doos: | TO-247-3 |
Temperatuur: | -55°C ~ 150°C (TJ) |
montage Type: | Through Hole |
Vochtgevoeligheidsniveau (MSL): | 1 (Unlimited) |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 600V |
Gate Charge (Qg) (Max) @ Vgs: | 17.3nC @ 15V |
FET Type: | N-Channel |
FET Feature: | - |
Aandrijfspanning (Max. Rds Aan, Min. Rds Aan): | 15V |
Drain naar de Bron Voltage (Vdss): | 900V |
gedetailleerde beschrijving: | N-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-247-3 |
Current - Continuous Drain (Id) @ 25 ° C: | 23A (Tc) |
Email: | [email protected] |